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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7663 датащи(PDF) 2 Page - International Rectifier |
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IRF7663 датащи(HTML) 2 Page - International Rectifier |
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2 / 7 page  IRF7663 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -7.0A, VGS = 0V trr Reverse Recovery Time ––– 70 105 ns TJ = 25°C, IF = -2.5A Qrr Reverse RecoveryCharge ––– 50 75 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– -66 -1.8 A When mounted on 1 inch square copper board, t<10 sec S D G Starting T J = 25°C, L = 17.8mH RG = 25Ω, IAS = -3.6A. (See Figure 10) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250uA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.01 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.020 VGS = -4.5V, ID = -7.0A ––– ––– 0.040 VGS = -2.5V, ID = -5.1A VGS(th) Gate Threshold Voltage -0.60 ––– -1.2 V VDS = VGS, ID = -250µA gfs Forward Transconductance 14.5 ––– ––– S VDS = -10V, ID = -7.0A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 30 45 ID = -6.0A Qgs Gate-to-Source Charge ––– 5.0 7.5 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 7.0 10.5 VGS = -5.0V td(on) Turn-On Delay Time ––– 11 ––– VDD = -10V tr Rise Time ––– 100 ––– ID = -6.0A td(off) Turn-Off Delay Time ––– 125 ––– RG = 6.2Ω tf Fall Time ––– 172 ––– RD = 1.64Ω Ciss Input Capacitance ––– 2520 ––– VGS = 0V Coss Output Capacitance ––– 615 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 375 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Pulse width ≤ 300µs; duty cycle ≤ 2%. |
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