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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7601 датащи(PDF) 2 Page - International Rectifier |
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IRF7601 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7601 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.035 VGS = 4.5V, ID = 3.8A ––– ––– 0.050 VGS = 2.7V, ID = 1.9A VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 6.1 ––– ––– S VDS = 10V, ID = 1.9A ––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 14 22 ID = 3.8A Qgs Gate-to-Source Charge ––– 2.0 3.0 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– 6.3 9.5 VGS = 4.5V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 5.1 ––– VDD = 10V tr Rise Time ––– 47 ––– ID = 3.8A td(off) Turn-Off Delay Time ––– 24 ––– RG = 6.2 Ω tf Fall Time ––– 32 ––– RD = 2.6 Ω, See Fig. 10 Ciss Input Capacitance ––– 650 ––– VGS = 0V Coss Output Capacitance ––– 300 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz, See Fig. 5 Ω µA nA ns IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width ≤ 300µs; duty cycle ≤ 2%. ISD ≤ 3.8A, di/dt ≤ 96A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 3.8A, VGS = 0V trr Reverse Recovery Time ––– 51 77 ns TJ = 25°C, IF = 3.8A Qrr Reverse RecoveryCharge ––– 69 100 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A ––– ––– 30 ––– ––– 1.8 S D G Surface mounted on FR-4 board, t ≤ 10sec. |
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