 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
IRF7555 датащи(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRF7555 датащи(HTML) 2 Page - International Rectifier |
|
|
2 / 7 page  IRF7555 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -1.6A, VGS = 0V trr Reverse Recovery Time ––– 54 82 ns TJ = 25°C, IF = -2.5A Qrr Reverse Recovery Charge ––– 41 61 nC di/dt = -100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– -34 -1.3 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.005 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.055 VGS = -4.5V, ID = -4.3A ––– ––– 0.105 VGS = -2.5V, ID = -3.4A VGS(th) Gate Threshold Voltage -0.60 ––– -1.2 V VDS = VGS, ID = -250µA gfs Forward Transconductance 2.5 ––– ––– S VDS = -10V, ID = -0.8A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 10 15 ID = -3.0A Qgs Gate-to-Source Charge ––– 2.1 3.1 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 2.5 3.7 VGS = -5.0V td(on) Turn-On Delay Time ––– 10 ––– VDD = -10V tr Rise Time ––– 46 ––– ID = -2.0A td(off) Turn-Off Delay Time ––– 60 ––– RG = 6.0Ω tf Fall Time ––– 64 ––– RD = 5.0Ω Ciss Input Capacitance ––– 1066 ––– VGS = 0V Coss Output Capacitance ––– 402 ––– pF VDS = -10V Crss Reverse Transfer Capacitance ––– 126 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Notes: Repetitive rating; pulse width limited by max. junction temperature. I SD ≤ -2.0A, di/dt ≤ -140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Surface mounted on FR-4 board, t ≤ 10sec.
Starting TJ = 25°C, L = 8.0mH RG = 25Ω, IAS = -3.0A. S D G |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
