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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7530 датащи(PDF) 2 Page - International Rectifier |
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IRF7530 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7530 2 www.irf.com Q Repetitive rating; pulse width limited by max. junction temperature. Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) Q p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 1.3A, VGS = 0V R trr Reverse Recovery Time ––– 19 29 ns TJ = 25°C, IF = 1.3A Qrr Reverse RecoveryCharge ––– 13 20 nC di/dt = 100A/µs R Source-Drain Ratings and Characteristics ––– ––– ––– ––– 40 1.3 A S When mounted on 1 inch square copper board, t<10 sec S D G T Starting TJ = 25°C, L = 2.6mH RG = 25Ω, IAS = 5.0A. (See Figure 10) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250uA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.030 VGS = 4.5V, ID = 5.4A R ––– ––– 0.045 VGS = 2.5V, ID = 4.6A R VGS(th) Gate Threshold Voltage 0.60 ––– 1.2 V VDS = VGS, ID = 250µA gfs Forward Transconductance 13 ––– ––– SVDS = 10V, ID = 5.4A ––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V Qg Total Gate Charge ––– 18 26 ID = 5.4A Qgs Gate-to-Source Charge ––– 3.4 5.1 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– 3.4 5.1 VGS = 4.5V R td(on) Turn-On Delay Time ––– 8.5 ––– VDD = 10V tr Rise Time ––– 11 ––– ID = 1.0A td(off) Turn-Off Delay Time ––– 36 ––– RG = 6.0Ω tf Fall Time ––– 16 ––– RD = 10Ω R Ciss Input Capacitance ––– 1310 ––– VGS = 0V Coss Output Capacitance ––– 180 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 150 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns R Pulse width ≤ 400µs; duty cycle ≤ 2%. |
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