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IRF7466 датащи(PDF) 2 Page - International Rectifier

номер детали IRF7466
подробное описание детали  Power MOSFET(Vdss=30V, Id=11A)
PDF  8 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7466 датащи(HTML) 2 Page - International Rectifier

  IRF7466 Datasheet HTML 1Page - International Rectifier IRF7466 Datasheet HTML 2Page - International Rectifier IRF7466 Datasheet HTML 3Page - International Rectifier IRF7466 Datasheet HTML 4Page - International Rectifier IRF7466 Datasheet HTML 5Page - International Rectifier IRF7466 Datasheet HTML 6Page - International Rectifier IRF7466 Datasheet HTML 7Page - International Rectifier IRF7466 Datasheet HTML 8Page - International Rectifier  
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IRF7466
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
–––
0.8
1.3
V
TJ = 25°C, IS = 8.8A, VGS = 0V
ƒ
–––
0.66
–––
TJ = 125°C, IS = 8.8A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
42
63
ns
TJ = 25°C, IF = 8.8A, VR=15V
Qrr
Reverse Recovery Charge
–––
59
89
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
42
63
ns
TJ = 125°C, IF = 8.8A, VR=15V
Qrr
Reverse Recovery Charge
–––
61
92
nC
di/dt = 100A/µs
ƒ
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
230
mJ
IAR
Avalanche Current

–––
8.8
A
Avalanche Characteristics
S
D
G
Diode Characteristics
2.3
90
A
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
22
–––
–––
S
VDS = 15V, ID = 8.8A
Qg
Total Gate Charge
–––
16
23
ID = 8.8A
Qgs
Gate-to-Source Charge
–––
7.4
11
nC
VDS = 15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
5.3
8.0
VGS = 4.5V
ƒ
Qoss
Output Gate Charge
–––
19
29
VGS = 0V, VDS = 15V
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 15V
tr
Rise Time
–––
2.8
–––
ID = 8.8A
td(off)
Turn-Off Delay Time
–––
13
–––
RG = 1.8Ω
tf
Fall Time
–––
3.6
–––
VGS = 4.5V
ƒ
Ciss
Input Capacitance
–––
2100 –––
VGS = 0V
Coss
Output Capacitance
–––
710
–––
VDS = 15V
Crss
Reverse Transfer Capacitance
–––
52
–––
pF
ƒ = 1.0MHz
VSD
Diode Forward Voltage
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
30
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.028
–––
V/°C
Reference to 25°C, ID = 1mA
–––
9.8
12.5
VGS = 10V, ID = 11A
ƒ
–––
13
17
VGS = 4.5V, ID = 8.8A
ƒ
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 24V, VGS = 0V
–––
–––
100
VDS = 24V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 16V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -16V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m
Ω



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