поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

IRF7459 датащи(PDF) 2 Page - International Rectifier

номер детали IRF7459
подробное описание детали  Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=12A)
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7459 датащи(HTML) 2 Page - International Rectifier

  IRF7459 Datasheet HTML 1Page - International Rectifier IRF7459 Datasheet HTML 2Page - International Rectifier IRF7459 Datasheet HTML 3Page - International Rectifier IRF7459 Datasheet HTML 4Page - International Rectifier IRF7459 Datasheet HTML 5Page - International Rectifier IRF7459 Datasheet HTML 6Page - International Rectifier IRF7459 Datasheet HTML 7Page - International Rectifier IRF7459 Datasheet HTML 8Page - International Rectifier  
Zoom Inzoom in Zoom Outzoom out
 2 / 8 page
background image
IRF7459
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
32
–––
–––
S
VDS = 16V, ID = 9.6A
Qg
Total Gate Charge
–––
23
35
ID = 9.6A
Qgs
Gate-to-Source Charge
–––
6.6
10
nC
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
6.3
9.5
VGS = 4.5V
ƒ
Qoss
Output Gate Charge
–––
17
26
VGS = 0V, VDS = 10V
td(on)
Turn-On Delay Time
–––
10
–––
VDD = 10V,
tr
Rise Time
–––
4.5
–––
ID = 9.6A
td(off)
Turn-Off Delay Time
–––
20
–––
RG = 1.8Ω
tf
Fall Time
–––
5.0
–––
VGS = 4.5V
ƒ
Ciss
Input Capacitance
–––
2480 –––
VGS = 0V
Coss
Output Capacitance
–––
1030 –––
VDS = 10V
Crss
Reverse Transfer Capacitance
–––
130
–––
pF
ƒ = 1.0MHz
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
–––
0.84
1.3
V
TJ = 25°C, IS = 9.6A, VGS = 0V
ƒ
–––
0.69
–––
TJ = 125°C, IS = 9.6A, VGS = 0V
trr
Reverse Recovery Time
–––
70
105
ns
TJ = 25°C, IF = 9.6A, VR= 15V
Qrr
Reverse Recovery Charge
–––
70
105
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
70
105
ns
TJ = 125°C, IF = 9.6A, VR=15V
Qrr
Reverse Recovery Charge
–––
75
113
nC
di/dt = 100A/µs
ƒ
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
290
mJ
IAR
Avalanche Current

–––
12
A
Avalanche Characteristics
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.024 –––
V/°C
Reference to 25°C, ID = 1mA
–––
6.7
9.0
VGS = 10V, ID = 12A
ƒ
–––
8.0
11
m
Ω
VGS = 4.5V, ID = 9.6A
ƒ
–––
11
22
VGS = 2.8V, ID = 6.0A
ƒ
VGS(th)
Gate Threshold Voltage
0.6
–––
2.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 16V, VGS = 0V
–––
–––
100
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 12V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -12V
S
D
G
Diode Characteristics
2.5
100
A
VSD
Diode Forward Voltage
Dynamic @ TJ = 25°C (unless otherwise specified)
ns



Html Pages

1 2 3 4 5 6 7 8


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com