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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7455 датащи(PDF) 2 Page - International Rectifier |
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IRF7455 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7455 2 www.irf.com S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V trr Reverse Recovery Time ––– 64 96 ns TJ = 25°C, IF = 2.5A Qrr Reverse RecoveryCharge ––– 99 150 nC di/dt = 100A/µs Diode Characteristics 2.5 120 A Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 200 mJ IAR Avalanche Current ––– 15 A EAR Repetitive Avalanche Energy ––– 0.25 mJ Avalanche Characteristics Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 44 ––– ––– S VDS = 10V, ID = 15A Qg Total Gate Charge ––– 37 56 ID = 15A Qgs Gate-to-Source Charge ––– 8.9 13 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– 13 20 VGS = 5.0V, td(on) Turn-On Delay Time ––– 17 ––– VDD = 15V tr Rise Time ––– 18 ––– ID = 1.0A td(off) Turn-Off Delay Time ––– 51 ––– RG = 6.0Ω tf Fall Time ––– 44 ––– VGS = 4.5V Ciss Input Capacitance ––– 3480 ––– VGS = 0V Coss Output Capacitance ––– 870 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 100 ––– pF ƒ = 1.0MHz Dynamic @ TJ = 25°C (unless otherwise specified) ns Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance Ω Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.00600.0075 VGS = 10V, ID = 15A ––– 0.0069 0.009 VGS = 4.5V, ID = 12A ––– 0.010 0.020 VGS = 2.8V, ID = 3.5A VGS(th) Gate Threshold Voltage 0.6 ––– 2.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 24V, VGS = 0V ––– ––– 100 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -12V |
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