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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7452 датащи(PDF) 2 Page - International Rectifier |
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IRF7452 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7452 2 www.irf.com Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 3.4 ––– ––– SVDS = 50V, ID = 2.7A Qg Total Gate Charge ––– 33 50 ID = 2.7A Qgs Gate-to-Source Charge ––– 7.3 11 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– 16 24 VGS = 10V, td(on) Turn-On Delay Time ––– 9.5 ––– VDD = 50V tr Rise Time ––– 11 ––– ID = 2.7A td(off) Turn-Off Delay Time ––– 16 ––– RG = 6.0Ω tf Fall Time ––– 13 ––– VGS = 10V Ciss Input Capacitance ––– 930 ––– VGS = 0V Coss Output Capacitance ––– 300 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 84 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1370 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 170 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 280 ––– VGS = 0V, VDS = 0V to 80V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 200 mJ IAR Avalanche Current ––– 4.5 A EAR Repetitive Avalanche Energy ––– 0.25 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 2.7A, VGS = 0V trr Reverse Recovery Time ––– 77 120 ns TJ = 25°C, IF = 2.7A Qrr Reverse RecoveryCharge ––– 270 410 nC di/dt = 100A/µs Diode Characteristics 2.3 36 A Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.060 Ω VGS = 10V, ID = 2.7A VGS(th) Gate Threshold Voltage 3.0 ––– 5.5 V VDS = VGS, ID = 250µA ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 24V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -24V IGSS IDSS Drain-to-Source Leakage Current Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient ––– 50 °C/W Thermal Resistance |
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