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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7401 датащи(PDF) 2 Page - International Rectifier |
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IRF7401 датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7401 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.044 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.022 VGS = 4.5V, ID = 4.1A ––– ––– 0.030 VGS = 2.7V, ID = 3.5A VGS(th) Gate Threshold Voltage 0.70 ––– ––– VVDS = VGS, ID = 250µA gfs Forward Transconductance 11 ––– ––– SVDS = 15V, ID = 4.1A ––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125 °C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V Qg Total Gate Charge ––– ––– 48 ID = 4.1A Qgs Gate-to-Source Charge ––– ––– 5.1 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 20 VGS = 4.5V, See Fig. 6 and 12 td(on) Turn-On Delay Time ––– 13 ––– VDD = 10V tr Rise Time ––– 72 ––– ID = 4.1A td(off) Turn-Off Delay Time ––– 65 ––– RG = 6.0Ω tf Fall Time ––– 92 ––– RD = 2.4Ω, See Fig. 10 Between lead tip and center of die contact Ciss Input Capacitance ––– 1600 ––– VGS = 0V Coss Output Capacitance ––– 690 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 310 ––– ƒ = 1.0MHz, See Fig. 5 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V trr Reverse Recovery Time ––– 39 59 ns TJ = 25°C, IF = 4.1A Qrr Reverse RecoveryCharge ––– 42 63 nC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 4.1A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– 35 ––– ––– 3.1 A S D G IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance ––– 4.0 ––– LD Internal Drain Inductance ––– 2.5 ––– nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance S D G Surface mounted on FR-4 board, t ≤ 10sec. |
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