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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7303 датащи(PDF) 2 Page - International Rectifier |
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IRF7303 датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7303 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.032 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.050 VGS = 10V, ID = 2.4A ––– ––– 0.080 VGS = 4.5V, ID = 2.0A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 5.2 ––– ––– S VDS = 15V, ID = 2.4A ––– ––– 1.0 VDS = 24V, VGS = 0V ––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125 °C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = - 20V Qg Total Gate Charge ––– ––– 25 ID = 2.4A Qgs Gate-to-Source Charge ––– ––– 2.9 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 7.9 VGS = 10V, See Fig. 6 and 12 td(on) Turn-On Delay Time ––– 6.8 ––– VDD = 15V tr Rise Time ––– 21 ––– ID = 2.4A td(off) Turn-Off Delay Time ––– 22 ––– RG = 6.0 Ω tf Fall Time ––– 7.7 ––– RD = 6.2Ω, See Fig. 10 Between lead tip and center of die contact Ciss Input Capacitance ––– 520 ––– VGS = 0V Coss Output Capacitance ––– 180 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 72 ––– ƒ = 1.0MHz, See Fig. 5 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.8A, VGS = 0V trr Reverse Recovery Time ––– 47 71 ns TJ = 25°C, IF = 2.4A Qrr Reverse RecoveryCharge ––– 56 84 nC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– 20 ––– ––– 2.5 A S D G IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance ––– 6.0 ––– LD Internal Drain Inductance ––– 4.0 ––– nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance S D G Surface mounted on FR-4 board, t ≤ 10sec. |
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