 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
IRF7301 датащи(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
IRF7301 датащи(HTML) 2 Page - International Rectifier |
|
|
2 / 9 page  IRF7301 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.044 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.050 VGS = 4.5V, ID = 2.6A ––– ––– 0.070 VGS = 2.7V, ID = 2.2A VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 8.3 ––– ––– S VDS = 15V, ID = 2.6A ––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 125 °C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = - 12V Qg Total Gate Charge ––– ––– 20 ID = 2.6A Qgs Gate-to-Source Charge ––– ––– 2.2 nC VDS = 16V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.0 VGS = 4.5V, See Fig. 6 and 12 td(on) Turn-On Delay Time ––– 9.0 ––– VDD = 10V tr Rise Time ––– 42 ––– ID = 2.6A td(off) Turn-Off Delay Time ––– 32 ––– RG = 6.0 Ω tf Fall Time ––– 51 ––– RD = 3.8Ω, See Fig. 10 Between lead tip and center of die contact Ciss Input Capacitance ––– 660 ––– VGS = 0V Coss Output Capacitance ––– 280 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 140 ––– ƒ = 1.0MHz, See Fig. 5 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 1.8A, VGS = 0V trr Reverse Recovery Time ––– 29 44 ns TJ = 25°C, IF = 2.6A Qrr Reverse RecoveryCharge ––– 22 33 nC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– 21 ––– ––– 2.5 A S D G IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance ––– 6.0 ––– LD Internal Drain Inductance ––– 4.0 ––– nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Surface mounted on FR-4 board, t ≤ 10sec. |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
