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IRF6601 датащи(PDF) 2 Page - International Rectifier

номер детали IRF6601
подробное описание детали  DirectFET??Power MOSFET(Vdss=20V)
PDF  8 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF6601 датащи(HTML) 2 Page - International Rectifier

  IRF6601 Datasheet HTML 1Page - International Rectifier IRF6601 Datasheet HTML 2Page - International Rectifier IRF6601 Datasheet HTML 3Page - International Rectifier IRF6601 Datasheet HTML 4Page - International Rectifier IRF6601 Datasheet HTML 5Page - International Rectifier IRF6601 Datasheet HTML 6Page - International Rectifier IRF6601 Datasheet HTML 7Page - International Rectifier IRF6601 Datasheet HTML 8Page - International Rectifier  
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IRF6601
2
www.irf.com
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
50
–––
–––
SVDS = 10 V, ID = 21 A
Qg
Total Gate Charge Cont FET
–––
36
54
ID = 21A
Qgs
Gate-to-Source Charge
–––
11
–––
nC
VDS = 16 V
Qgd
Gate to Drain ("Miller")Charge
–––
12
–––
VGS = 4.5 V,
Qoss
Output Charge
–––
48
–––
VDS = 0 V, VGS = 16V
td(on)
Turn-On Delay Time
–––
16
–––
VDD = 15 V
tr
Rise Time
–––
140
–––
ns
ID = 21 A
td(off)
Turn-Off Delay Time
–––
33
–––
RG = 5.1 Ω
tf
Fall Time
–––
110
–––
VGS = 4.5 V
‚
Ciss
Input Capacitance
–––
3440 –––
VGS = 0V
Coss
Output Capacitance
–––
2430 –––
pF
VDS = 10V
Crss
Reverse Transfer Capacitance
–––
380
–––
ƒ = 1.0MHz
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
–––
0.83
1.2
V
TJ = 25°C, IS = 21A, VGS = 0V
‚
–––
0.68
–––
TJ = 125°C, IS = 21A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
60
90
ns
TJ = 25°C, IF = 21A, VR=15 V
Qrr
Reverse Recovery Charge
–––
94
140
nC
di/dt = 100A/µs
‚
trr
Reverse Recovery Time
–––
62
93
ns
TJ = 125°C, IF = 21A, VR=15 V
Qrr
Reverse Recovery Charge
–––
88
130
nC
di/dt = 100A/µs
‚
Dynamic @ TJ = 25°C (unless otherwise specified)
S
D
G
Diode Characteristics
26
200
A
VSD
Diode Forward Voltage
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
VVGS = 0V, ID = 100µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.019
–––
V/°C
Reference to 25°C, ID = 1mA
–––
–––
3.8
VGS = 10V, ID = 26A
–––
–––
5.0
VGS = 4.5V, ID = 21A
‚
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 16V, VGS = 0V
–––
–––
100
VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
–––
100
VGS = 20 V
Gate-to-Source Reverse Leakage
–––
–––
-100
nA
VGS = -20 V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m
Ω
Symbol
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‡
–––
65
mJ
IAR
Avalanche Current

–––
21
A
Avalanche Characteristics



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