NP83P06PDG-E2-AYNote datasheet(3/9 Pages) RENESAS

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MOS FIELD EFFECT TRANSISTOR

NP83P06PDG

SWITCHING

P-CHANNEL POWER MOSFET

DATA SHEET

Document No. D18691EJ3V0DS00 (3rd edition)

Date Published May 2007 NS CP(K)

Printed in Japan

2007

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DESCRIPTION

The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

NP83P06PDG-E1-AY

Note

NP83P06PDG-E2-AY

Note

Pure Sn (Tin)

Tape 800 p/reel

TO-263 (MP-25ZP)

Note Pb-free (This product does not contain Pb in external electrode.)

FEATURES

• Super low on-state resistance

RDS(on)1 = 8.8 m

Ω MAX. (VGS = −10 V, ID = −41.5 A)

RDS(on)2 = 12 m

Ω MAX. (VGS = −4.5 V, ID = −41.5 A)

• High current rating: ID(DC) = m83 A

ABSOLUTE MAXIMUM RATINGS (TA = 25

°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

−60

Gate to Source Voltage (VDS = 0 V)

VGSS

m20

Drain Current (DC) (TC = 25

°C)

ID(DC)

m83

Drain Current (pulse)

Note1

ID(pulse)

m249

Total Power Dissipation (TC = 25

°C)

PT1

150

Total Power Dissipation (TA = 25

°C)

PT2

1.8

Channel Temperature

Tch

175

°C

Storage Temperature

Tstg

−55 to +175

°C

Single Avalanche Current

Note2

IAS

Single Avalanche Energy

Note2

EAS

240

Notes 1. PW

≤ 10

μs, Duty Cycle ≤ 1%

2. Starting Tch = 25

°C, VDD = −30 V, RG = 25 Ω, VGS = −20 → 0 V

THERMAL RESISTANCE

Channel to Case Thermal Resistance

Rth(ch-C)

1.0

°C/W

Channel to Ambient Thermal Resistance

Rth(ch-A)

83.3

°C/W

(TO-263)

<R>

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