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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NP50P06SDG-E1-AYNote датащи(PDF) 7 Page - Renesas Technology Corp |
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NP50P06SDG-E1-AYNote датащи(HTML) 7 Page - Renesas Technology Corp |
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7 / 9 page  Data Sheet D19073EJ2V0DS 5 NP50P06SDG DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 0 10 20 30 40 -75 -25 25 75 125 175 225 ID = −25 A Pulsed −10 V VGS = −4.5 V Tch - Channel Temperature - °C 10 100 1000 10000 -0.1 -1 -10 -100 VGS = 0 V f = 1 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1 10 100 1000 -0.1 -1 -10 -100 tr td(off) td(on) tf VDD = −30 V VGS = −10 V RG = 0 Ω ID - Drain Current - A 0 -10 -20 -30 -40 -50 -60 0 20 40 60 80 100 120 0 -2 -4 -6 -8 -10 -12 VDS ID = −50 A VGS VDD = −48 V −30 V −12 V QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT -0.01 -0.1 -1 -10 -100 0 0.5 1 1.5 VGS = −10 V 0 V Pulsed VF(S-D) - Source to Drain Voltage - V 1 10 100 1000 -0.1 -1 -10 -100 di/dt = −100 A/μs VGS = 0 V IF - Diode Forward Current - A |
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