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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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NP20P04SLG-E2-AYNote датащи(PDF) 4 Page - Renesas Technology Corp |
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NP20P04SLG-E2-AYNote датащи(HTML) 4 Page - Renesas Technology Corp |
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4 / 9 page  Data Sheet D19075EJ2V0DS 2 NP20P04SLG ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −40 V, VGS = 0 V −10 μA Gate Leakage Current IGSS VGS = m20 V, VDS = 0 V m10 μA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = −250 μA −1.0 −1.6 −2.5 V Forward Transfer Admittance Note | yfs | VDS = −10 V, ID = −10 A 7 14 S Drain to Source On-state Resistance Note RDS(on)1 VGS = −10 V, ID = −10 A 20 25 m Ω RDS(on)2 VGS = −4.5 V, ID = −10 A 24 38 m Ω Input Capacitance Ciss VDS = −10 V, 1650 pF Output Capacitance Coss VGS = 0 V, 260 pF Reverse Transfer Capacitance Crss f = 1 MHz 175 pF Turn-on Delay Time td(on) VDD = −20 V, ID = −10 A, 8 ns Rise Time tr VGS = −10 V, 6 ns Turn-off Delay Time td(off) RG = 0 Ω 160 ns Fall Time tf 80 ns Total Gate Charge QG VDD = −32 V, 34 nC Gate to Source Charge QGS VGS = −10 V, 4 nC Gate to Drain Charge QGD ID = −20 A 8 nC Body Diode Forward Voltage Note VF(S-D) IF = −20 A, VGS = 0 V 0.92 1.5 V Reverse Recovery Time trr IF = −20 A, VGS = 0 V, 35 ns Reverse Recovery Charge Qrr di/dt = −100 A/ μs 36 nC Note Pulsed test PW ≤ 350 μs, Duty Cycle ≤ 2% TEST CIRCUIT 1 AVALANCHE CAPABILITY RG = 25 Ω 50 Ω L VDD VGS = −20 → 0 V BVDSS IAS ID VDS Starting Tch VDD D.U.T. TEST CIRCUIT 3 GATE CHARGE TEST CIRCUIT 2 SWITCHING TIME PG. RG 0 VGS(−) D.U.T. RL VDD τ = 1 s μ Duty Cycle ≤ 1% VGS Wave Form VDS Wave Form VGS(−) 10% 90% VGS 10% 0 VDS(−) 90% 90% td(on) tr td(off) tf 10% τ VDS 0 ton toff PG. PG. 50 Ω D.U.T. RL VDD IG = −2 mA − |
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