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NP15P04SLG-E2-AYNote датащи(PDF) 7 Page - Renesas Technology Corp

номер детали NP15P04SLG-E2-AYNote
подробное описание детали  SWITCHING P-CHANNEL POWER MOSFET
PDF  9 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP15P04SLG-E2-AYNote датащи(HTML) 7 Page - Renesas Technology Corp

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Data Sheet D19077EJ2V0DS
5
NP15P04SLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0
10
20
30
40
50
60
70
80
-75
-25
25
75
125
175
225
ID =
−7.5 A
Pulsed
−10 V
VGS =
−4.5 V
Tch - Channel Temperature -
°C
10
100
1000
10000
-0.1
-1
-10
-100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1
10
100
1000
-0.1
-1
-10
-100
tr
td(off)
td(on)
tf
VDD =
−20 V
VGS =
−10 V
RG = 0
Ω
ID - Drain Current - A
0
-10
-20
-30
-40
010
20
30
0
-3
-6
-9
-12
VDS
ID =
−15 A
VGS
VDD =
−32 V
−20 V
−8 V
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
-0.01
-0.1
-1
-10
-100
0
0.511.5
VGS =
−10 V
0 V
Pulsed
VF(S-D) - Source to Drain Voltage - V
1
10
100
1000
-0.1
-1
-10
-100
di/dt =
−100 A/μs
VGS = 0 V
IF - Diode Forward Current - A



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