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IRF5804 датащи(PDF) 2 Page - International Rectifier

номер детали IRF5804
подробное описание детали  Power MOSFET(Vdss=-40V)
PDF  9 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF5804 датащи(HTML) 2 Page - International Rectifier

  IRF5804 Datasheet HTML 1Page - International Rectifier IRF5804 Datasheet HTML 2Page - International Rectifier IRF5804 Datasheet HTML 3Page - International Rectifier IRF5804 Datasheet HTML 4Page - International Rectifier IRF5804 Datasheet HTML 5Page - International Rectifier IRF5804 Datasheet HTML 6Page - International Rectifier IRF5804 Datasheet HTML 7Page - International Rectifier IRF5804 Datasheet HTML 8Page - International Rectifier IRF5804 Datasheet HTML 9Page - International Rectifier  
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IRF5804
2
www.irf.com
FOR REVIEW ONLY
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-40
–––
–––
VVGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.03
–––
V/°C
Reference to 25°C, ID = -1mA
–––
–––
198
VGS = -10V, ID = -2.5
‚
–––
–––
334
VGS = -4.5V, ID = -2.0A
‚
VGS(th)
Gate Threshold Voltage
-1.0
–––
-3.0
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
2.5
–––
–––
SVDS = -10V, ID = -2.5A
–––
–––
-10
VDS = -32V, VGS = 0V
–––
–––
-25
VDS = -32V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
–––
–––
-100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
5.7
8.5
ID = -2.5A
Qgs
Gate-to-Source Charge
–––
2.8
4.2
nC
VDS = -20V
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.1
3.2
VGS = -10V
td(on)
Turn-On Delay Time
–––
19
–––
VDD = -20V
‚
tr
Rise Time
–––
430
–––
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
100
–––
RG = 6.0Ω
tf
Fall Time
–––
64
–––
VGS = -10V
Ciss
Input Capacitance
–––
680
–––
VGS = 0V
Coss
Output Capacitance
–––
60
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
44
–––
ƒ = 1kHz
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
-1.2
V
TJ = 25°C, IS = -2.0A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
24
36
ns
TJ = 25°C, IF = -2.0A
Qrr
Reverse Recovery Charge
–––
32
49
nC
di/dt = -100A/µs
‚
Source-Drain Ratings and Characteristics
A
-10
–––
–––
–––
-2.5
–––
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
m
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
ƒ Surface mounted on 1 in square Cu board



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