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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF520L датащи(PDF) 2 Page - International Rectifier |
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IRF520L датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF520NS/L Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = 10V, ID = 5.7A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 2.7 ––– ––– S VDS = 25V, ID = 5.7A ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 25 ID = 5.7A Qgs Gate-to-Source Charge ––– ––– 4.8 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 11 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 4.5 ––– VDD = 50V tr Rise Time ––– 23 ––– ID = 5.7A td(off) Turn-Off Delay Time ––– 32 ––– RG = 22Ω tf Fall Time ––– 23 ––– RD = 8.6Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 330 ––– VGS = 0V Coss Output Capacitance ––– 92 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 54 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current nH 7.5 LS Internal Source Inductance V DD = 25V, starting TJ = 25°C, L = 4.7mH RG = 25Ω, IAS = 5.7A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. ISD ≤ 5.7A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF520N data and test conditions Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)
––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 5.7A, VGS = 0V trr Reverse Recovery Time ––– 99 150 ns TJ = 25°C, IF = 5.7A Qrr Reverse RecoveryCharge ––– 390 580 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics S D G A 9.7 38 ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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