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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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F3710S датащи(PDF) 2 Page - International Rectifier |
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F3710S датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF3710S/L Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.025 Ω VGS = 10V, ID = 28A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 20 ––– ––– S VDS = 25V, ID = 28A ––– ––– 25 µA VDS = 100V, VGS = 0V ––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 190 ID = 28A Qgs Gate-to-Source Charge ––– ––– 26 nC VDS = 80V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 82 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = 50V tr Rise Time ––– 59 ––– ID = 28A td(off) Turn-Off Delay Time ––– 58 ––– RG = 2.5Ω tf Fall Time ––– 48 ––– RD = 1.7Ω, See Fig. 10
Between lead, ––– ––– and center of die contact Ciss Input Capacitance ––– 3000 ––– VGS = 0V Coss Output Capacitance ––– 640 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 330 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS ns IDSS Drain-to-Source Leakage Current nH 7.5 LS Internal Source Inductance V DD = 25V, starting TJ = 25°C, L = 1.4mH RG = 25Ω, IAS = 28A. (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Notes: ** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer to application note #AN-994. ISD ≤ 28A, di/dt ≤ 460A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRF3710 data and test conditions Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode)
––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V trr Reverse Recovery Time ––– 210 320 ns TJ = 25°C, IF = 28A Qrr Reverse RecoveryCharge ––– 1.7 2.6 µC di/dt = 100A/µs
Source-Drain Ratings and Characteristics S D G A 57 180 ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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