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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF3703 датащи(PDF) 2 Page - International Rectifier |
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IRF3703 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF3703 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– VVGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.028 ––– V/°C Reference to 25°C, ID = 1mA ––– 2.3 2.8 VGS = 10V, ID = 76A ––– 2.8 3.9 VGS = 7.0V, ID = 76A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 24V, VGS = 0V ––– ––– 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 150 ––– ––– SVDS = 24V, ID = 76A Qg Total Gate Charge ––– 209 ––– ID = 76A Qgs Gate-to-Source Charge ––– 62 ––– nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– 42 ––– VGS = 10V, td(on) Turn-On Delay Time ––– 18 ––– VDD = 15V, VGS = 10V tr Rise Time ––– 123 ––– ID = 76A td(off) Turn-Off Delay Time ––– 53 ––– RG = 1.8Ω tf Fall Time ––– 24 ––– VGS = 10V Ciss Input Capacitance ––– 8250 ––– VGS = 0V Coss Output Capacitance ––– 3000 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 290 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 10360 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz Coss Output Capacitance ––– 3060 ––– VGS = 0V, VDS = 24V, ƒ = 1.0MHz Coss eff. Effective Output Capacitance ––– 2590 ––– VGS = 0V, VDS = 0V to 24V Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 1700 mJ IAR Avalanche Current ––– 76 A EAR Repetitive Avalanche Energy ––– 23 mJ Avalanche Characteristics S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– 0.8 1.3 V TJ = 25°C, IS = 76A, VGS = 0V trr Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 76A, VDS = 16V Qrr Reverse RecoveryCharge ––– 185 275 nC di/dt = 100A/µs Diode Characteristics 210 1000 A Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω |
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