Parameter

Max.

Units

Drain- Source Voltage

20

V

4.2

3.4

A

Pulsed Drain Current



17

Power Dissipation

ƒ

2.5

Power Dissipation

ƒ

1.6

Linear Derating Factor

0.02

mW/°C

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

-55 to + 150

°C

11/15/01

Absolute Maximum Ratings

W

www.irf.com

1

IRF1902

Ω)

Ω)

Ω)

Ω)

20V

4.0A

3.2A

SO-8

T op V iew

8

1

2

3

4

5

6

7

D

D

D

D

G

S

A

S

S

A

International Rectifier utilize advanced processing

techniques to achieve the extremely low on-resistance

per silicon area. This benefit provides the designer

with an extremely efficient device for use in battery

and load management applications..

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infrared, or wave soldering techniques.

Description

Symbol

Parameter

Typ.

Max.

Units

Junction-to-Drain Lead

–––

20

Junction-to-Ambient

ƒ

–––

50

°C/W

Thermal Resistance

PD - 94282A