C-1

IRCZ24

PD - 9.615A

Description

Absolute Maximum Ratings

Third Generation HEXFETs from International Rectifier provide the designer with

the best combination of fast switching, ruggedized device, low on-resistance and

cost-effectiveness.

The HEXSence device provides an accurate fraction of the drain current through

the additional two leads to be used for control or protection of the device. These

devices exhibit similar electrical and thermal characteristics as their IRF-series

equivalent part numbers. The provision of a kelvin source connection effectively

eliminates problems of common source inductance when the HEXSence is

used as a fast, high-current switch in non current-sensing applications.

Parameter

Max.

Units

17

12

Pulsed Drain Current



68

Power Dissipation

60

W

Linear Derating Factor

0.40

W/°C

Gate-to-Source Voltage

±20

V

Single Pulse Avalanche Energy

‚

6.0

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

4.5

A

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case)

Mounting Torque, 6-32 or screw

10 lbf•in (1.1 N•m)

A

°C

Parameter

Min.

Max.

Units

Junction-to-Case

—

—

2.5

Case-to-Sink, Flat, Greased Surface

—

0.50

—

Junction-to-Ambient

—

—

62

Thermal Resistance

** When mounted on FR-4 board using minimum recommended footprint. For recommended footprint and soldering techniques refer toapplication note #AN-994.

°C/W

TO-220 HexSense

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6/3/97, 3:27 PM

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