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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IR2113 датащи(PDF) 1 Page - International Rectifier |
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IR2113 датащи(HTML) 1 Page - International Rectifier |
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1 / 14 page  Typical Connection Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout for both channels n Separate logic supply range from 5 to 20V Logic and power ground ±5V offset n CMOS Schmitt-triggered inputs with pull-down n Cycle by cycle edge-triggered shutdown logic n Matched propagation delay for both channels n Outputs in phase with inputs Description The IR2113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduc- tion. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts. Packages Data Sheet No. PD-6.030C IR2113 HIGH AND LOW SIDE DRIVER Product Summary VOFFSET 600V max. IO+/- 2A / 2A VOUT 10 - 20V ton/off (typ.) 120 & 94 ns Delay Matching 10 ns HIN up to 600V TO LOAD V DD V B V S HO LO COM HIN LIN V SS SD V CC LIN V DD SD V SS V CC CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-61 Next Data Sheet Index Previous Datasheet To Order |
Аналогичный номер детали - IR2113 |
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Аналогичное описание - IR2113 |
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