 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
CPV362MM датащи(PDF) 2 Page - International Rectifier |
|
|
|||||||||||||||||||||||||||||
CPV362MM датащи(HTML) 2 Page - International Rectifier |
|
|
2 / 8 page  C-410 CPV362MM Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.42 — V/°C VGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.2 3.3 IC = 4.6A VGE = 15V — 2.8 — V IC = 7.9A See Fig. 2, 5 — 2.5 — IC = 4.6A, T J = 150°C VGE(th) Gate Threshold Voltage 3.0 — 5.5 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance 2.7 3.8 — S VCE = 100V, IC =8.0A ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 600V — — 1700 VGE = 0V, VCE = 600V, T J = 150°C VFM Diode Forward Voltage Drop — 1.4 1.7 V IC = 8.0A See Fig. 13 — 1.3 1.6 IC = 8.0A, T J = 150°C IGES Gate-to-Emitter Leakage Current — — ±500 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 20) Notes: Pulse width 5.0µs, single shot. VCC=80%(VCES), VGE=20V, L=10µH, RG= 50Ω, ( See fig. 19 ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 16 24 IC = 8.0A Qge Gate - Emitter Charge (turn-on) — 3.6 5.2 nC VCC = 400V Qgc Gate - Collector Charge (turn-on) — 6.0 9.0 See Fig. 8 td(on) Turn-On Delay Time — 66 — TJ = 25°C tr Rise Time — 28 — ns IC = 4.6A, V CC = 480V td(off) Turn-Off Delay Time — 140 210 VGE = 15V, RG = 50Ω tf Fall Time — 53 100 Energy losses include "tail" and Eon Turn-On Switching Loss — 0.18 — diode reverse recovery. Eoff Turn-Off Switching Loss — 0.14 — mJ See Fig. 9, 10, 11, 18 Ets Total Switching Loss — 0.32 0.48 tsc Short Circuit Withstand Time 10 — — µs VCC = 360V, T J = 125°C VGE = 15V, RG = 50Ω, VCPK < 500V td(on) Turn-On Delay Time — 64 — TJ = 150°C, See Fig. 9, 10, 11, 18 tr Rise Time — 25 — ns IC = 4.6A, V CC = 480V td(off) Turn-Off Delay Time — 240 — VGE = 15V, RG = 50Ω tf Fall Time — 160 — Energy losses include "tail" and Ets Total Switching Loss — 0.56 — mJ diode reverse recovery. Cies Input Capacitance — 365 — VGE = 0V Coes Output Capacitance — 47 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 4.8 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 37 55 ns TJ = 25°C See Fig. — 55 90 TJ = 125°C 14 IF = 8.0A Irr Diode Peak Reverse Recovery Current — 3.5 5.0 A TJ = 25°C See Fig. — 4.5 8.0 TJ = 125°C 15 V R = 200V Qrr Diode Reverse Recovery Charge — 65 138 nC TJ = 25°C See Fig. — 124 360 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 240 — A/µs TJ = 25°C See Fig. During tb — 210 — TJ = 125°C 17 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Next Data Sheet Index Previous Datasheet To Order |
|
|
ссылки URL |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | Ссылка на техническое описание | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
