2SC5754 datasheet(1/12 Pages) CEL

номер детали	2SC5754

подробное описание детали	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)

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производитель	CEL [California Eastern Labs]

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DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Document No. PU10008EJ02V0DS (2nd edition)

Date Published March 2003 CP(K)

NPN SILICON RF TRANSISTOR

NE664M04 / 2SC5754

NPN SILICON RF TRANSISTOR FOR

MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)

FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

The mark

•

• shows major revised points.

FEATURES

• Ideal for 460 MHz to 2.4 GHz medium output power amplification

•PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm

• High collector efficiency:

ηC = 60%

• UHS0-HV technology (fT = 25 GHz) adopted

• High reliability through use of gold electrodes

• Flat-lead 4-pin thin-type super minimold (M04) package

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

NE664M04-A

2SC5754

-A

50 pcs (Non reel)

• 8 mm wide embossed taping

NE664M04-T2-A

2SC5754-T2

-A

3 kpcs/reel

• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

JEITA

Part No.

Аналогичный номер детали - 2SC5754

производитель	номер детали	датащи	подробное описание детали
NEC	2SC5754	89Kb / 13P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
Renesas Technology Corp	2SC5754	222Kb / 15P	NPN SILICON RF TRANSISTOR 2003
NEC	2SC5754-T2	89Kb / 13P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
Renesas Technology Corp	2SC5754-T2	222Kb / 15P	NPN SILICON RF TRANSISTOR 2003
Renesas Technology Corp	2SC5754	222Kb / 15P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

More results

Аналогичное описание - 2SC5754

производитель	номер детали	датащи	подробное описание детали
NEC	2SC5754	89Kb / 13P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
NEC	2SC5752	91Kb / 20P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
California Eastern Labs	NESG270034	349Kb / 11P	NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG)
Renesas Technology Corp	2SC5509	231Kb / 10P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER, LOW-NOISE
Renesas Technology Corp	NESG2101M05	172Kb / 15P	NPN SiGe RF Transistor for Medium Output Power Amplification 125 mW
California Eastern Labs	2SC5752	3Mb / 17P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION
Renesas Technology Corp	2SC5750	216Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD
	2SC5752	225Kb / 22P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD
	2SC5754	222Kb / 15P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
	2SC5750	216Kb / 18P	NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION July 2001

More results

2SC5754 датащи(PDF) 1 Page - California Eastern Labs

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