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2SC5509 датащи(PDF) 5 Page - California Eastern Labs

номер детали 2SC5509
подробное описание детали  NPN SILICON RF TRANSISTOR
PDF  10 Pages
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производитель  CEL [California Eastern Labs]
домашняя страница  http://www.cel.com
Logo CEL - California Eastern Labs

2SC5509 датащи(HTML) 5 Page - California Eastern Labs

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NE663M04 / 2SC5509
Chapter Title
R09DS0056EJ0300 Rev.3.00
Page 5 of 8
Mar 5, 2013
Noise Characteristics
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
VCE = 2 V
f = 1 GHz
NF
Ga
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
VCE = 2 V
f = 1.5 GHz
NF
Ga
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
VCE = 2 V
f = 2 GHz
NF
Ga
6.0
0.0
5.0
4.0
3.0
2.0
1.0
30
25
20
15
10
5
0
1
10
100
Collector Current IC (mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
VCE = 2 V
f = 2.5 GHz
NF
Ga
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the
parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[Products]
→ [RF Devices] → [Device Parameters]
URL http://www.renesas.com/products/microwave/
<R>
A Business Partner of Renesas Electronics Corporation.



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