DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

NPN SILICON RF TRANSISTOR

NE68518 / 2SC5015

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

4-PIN SUPER MINIMOLD (18)

Document No. PU10403EJ01V0DS (1st edition)

(Previous No. P10394EJ2V0DS00)

Date Published June 2003 CP(K)

The mark shows major revised points.

FEATURES

• Low noise and high gain

• Low voltage operation

• 4-pin super minimold (18) package

ORDERING INFORMATION

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NE68518-A

2SC5015-A

50 pcs (Non reel)

• 8 mm wide embossed taping

NE68518-T1-A

2SC5015-T1-A

3 kpcs/reel

• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

9

V

Collector to Emitter Voltage

6

V

Emitter to Base Voltage

2

V

I

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n

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C

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tc

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lo

C

C

30

mA

Total Power Dissipation

150

mW

Junction Temperature

150

°

C

Storage Temperature

−

65 to +150

°

C

JEITA

Part No.