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2SC5007 датащи(PDF) 2 Page - California Eastern Labs

номер детали 2SC5007
подробное описание детали  NPN SILICON EPITAXIAL TRANSISTOR
PDF  9 Pages
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производитель  CEL [California Eastern Labs]
домашняя страница  http://www.cel.com
Logo CEL - California Eastern Labs

2SC5007 датащи(HTML) 2 Page - California Eastern Labs

  2SC5007 Datasheet HTML 1Page - California Eastern Labs 2SC5007 Datasheet HTML 2Page - California Eastern Labs 2SC5007 Datasheet HTML 3Page - California Eastern Labs 2SC5007 Datasheet HTML 4Page - California Eastern Labs 2SC5007 Datasheet HTML 5Page - California Eastern Labs 2SC5007 Datasheet HTML 6Page - California Eastern Labs 2SC5007 Datasheet HTML 7Page - California Eastern Labs 2SC5007 Datasheet HTML 8Page - California Eastern Labs 2SC5007 Datasheet HTML 9Page - California Eastern Labs  
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NE68119 / 2SC5007
2
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
0.8
μ
A
VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
0.8
μ
A
VEB = 1 V, IC = 0
h
ni
a
G
t
n
e
rr
u
C
C
D
FE
80
160
VCE = 3 V, IC = 7 mA*1
Gain Bandwidth Product
fT
4.5
7.0
GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
Feed-Back Capacitance
Cre
0.45
0.9
pF
VCB = 3 V, IE = 0, f = 1 MHz*2
Insertion Power Gain
|S21e|2
10.0
12.0
dB
VCE = 3 V, IC = 7 mA, f = 1 GHz
V
B
d
7
.
2
4
.
1
F
N
e
r
u
gi
F
e
si
o
N
CE
= 3 V, IC = 7 mA, f = 1 GHz
*1 Pulse Measurement PW ≤ 350 μs, Duty Cycle ≤ 2 %
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance
bridge.
hFE Classification
RANK
FB
Marking
34
hFE
80 to 160



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