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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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1SS136 датащи(PDF) 1 Page - SUNMATE electronic Co., LTD |
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1SS136 датащи(HTML) 1 Page - SUNMATE electronic Co., LTD |
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1 / 1 page  200mA Axial Leaded High Speed Switching Diode of 1 x Units 1SS136 1 Features Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified · · · · Mechanical Data 1.6 max 25.4 min 25.4 min 3.04 max 0.55 max DO-34 · Case: DO-34 Glass Case High reliability. High speed. (trr=2.0ns Max.) Silicon epitaxial planar Marking : Cathode band and type number Symbol R ating Rating Unit VRM Peak Reverse Voltage 75 V VR DC Reverse Voltage 65 V IFM Peak Forward Current 600 mA IO Mean Rectifying Current 200 mA Isurge Surge Current (1us) 4.0 A TJ Operating Junction Temperature -55 to +150 OC TSTG Storage Temperature -55 to +150 OC VF Forward Voltage (IF=100mAdc) --- 1.0 Vdc IR Reverse Current (VR=65Vdc) --- 0.5 uAdc CT Capacitance Between Terminals (VR=0, f=1.0MHz) --- 3.0 pF trr Reverse Recovery Time (VR=6.0Vdc, IF=10mAdc) --- 2.0 ns Symbol Parameter Min Ma |
Аналогичный номер детали - 1SS136 |
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Аналогичное описание - 1SS136 |
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