5-1

Semiconductor

Features

• 2A, 80V and 100V

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Description

These are N-channel enhancement mode silicon gate power

field effect transistors designed for applications such as

switching regulators, switching converters. motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA09282.

Symbol

Packaging

JEDEC TO-220AB

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFP2N08

TO-220AB

RFP2N08

RFP2N10

TO-220AB

RFP2N10

NOTE: When ordering, use entire part number.

D

G

S

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

July 1998

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.

Copyright

RFP2N08,

RFP2N10

2A, 80V and 100V, 1.05 Ohm,

N-Channel Power MOSFETs

File Number

2883.1