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RFF60P06 датащи(PDF) 8 Page - Intersil Corporation |
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RFF60P06 датащи(HTML) 8 Page - Intersil Corporation |
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8 / 8 page ![]() 4-188 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTX/JANTXV Equivalent) PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±20V, TC = 25 oC ±20 (Note 4) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value, TC = 25 oC ±25 (Note 4) µA On Resistance rDS(ON) TC = 125 oC at Rated I D ±20% (Note 5) Ω Gate Threshold Voltage VGS(TH) ID = 1.0mA, TC = 25 oC ±20% (Note 5) V NOTES: 5. Or 100% of Initial Reading (whichever is greater). 6. Of Initial Reading. Screening Information TEST JANTX/JANTXV EQUIVALENT Gate Stress VGS = -30V, t = 250µs Pind Optional PDA 10% Pre Burn-In Test (Note 1) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150 oC, Time = 48 hours Interim Electrical Tests (Note 6) All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150 oC, Time = 168 hours Final Electrical Tests (Note 6) MIL-S-19500, Group A, Subgroup 2 NOTE: 7. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Safe Operating Area SOA VDS = -48V, t = 10ms 8.0 A Unclamped Inductive Switching IAS VGS(PEAK) = -15V, L = 0.1mH 75 A Thermal Response ∆VSD tH = 100ms; VH = 25V, IH = 4A 142 mV Thermal Impedance ∆VSD tH = 500ms; VH = 25V, IH = 4A 182 mV RFF60P06 |
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