RFD4N06LSM datasheet(3/5 Pages) INTERSIL

номер детали	RFD4N06LSM

подробное описание детали	4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

PDF	5 Pages

Scroll/Zoom	100%

производитель	INTERSIL [Intersil Corporation]

домашняя страница	http://www.intersil.com/cda/home

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3 / 5 page

6-191

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. SATURATION CHARACTERISTICS

FIGURE 5. TRANSFER CHARACTERISTICS

FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

TC, CASE TEMPERATURE (

oC)

100

125

150

1.2

1.0

0.8

0.6

0.4

0.2

100

125

150

TC, CASE TEMPERATURE (

oC)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0.1

100

1.0

TJ = MAX RATED

TC = 25

OPERATION IN THIS AREA

LIMITED BY rDS(ON)

0123

VDS, DRAIN TO SOURCE VOLTAGE (V)

PULSE DURATION = 80

µs

TC = 25

VGS = 7.5V

VGS = 10V

VGS = 5V

4.5V

3.5V

2.5V

VGS, GATE TO SOURCE VOLTAGE (V)

TC = -40

TC = 125

VDS = 10V

PULSE DURATION = 80

µs

DUTY CYCLE

≤ 2%

TC = 25

TC = 125

ID, DRAIN CURRENT (A)

TC = 25

TC = -40

1.4

1.2

1.0

0.8

0.6

0.4

0.2

1.6

02468

VGS = 5V

PULSE DURATION = 80

µs

TC = 125

RFD4N06L, RFD4N06LSM

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