4-435

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE® is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

RFD3055, RFD3055SM, RFP3055

12A, 60V, 0.150 Ohm, N-Channel Power

MOSFETs

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

Formerly developmental type TA49082.

Features

• 12A, 60V

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFD3055

TO-251AA

FD3055

RFD3055SM

TO-252AA

FD3055

RFP3055

TO-220AB

FP3055

NOTE: When ordering, use the entire part number. Add the suffix 9A,

to obtain the TO-252AA variant in tape and reel, i.e. RFD3055SM9A.

G

D

S

JEDEC TO-251AA

JEDEC TO-252AA

JEDEC TO-220AB

SOURCE

DRAIN (FLANGE)

GATE

DRAIN

GATE

SOURCE

DRAIN (FLANGE)

GATE

DRAIN (FLANGE)

SOURCE

DRAIN

Data Sheet

July 1999

File Number

3648.2