1

May 1997

Features

• 16A, 20V

•

Temperature Compensating PSPICE Model

• Can be Driven Directly from CMOS, NMOS,

and TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Formerly developmental type TA49243.

Description

The RFD16N02L and RFD16N02LSM are N-Channel power

MOSFETs manufactured using the MegaFET process. This

process, which uses feature sizes approaching those of

LSI circuits, gives optimum utilization of silicon, resulting in

outstanding performance. They were designed for use in

applications such as switching regulators, switching convert-

ers, motor drivers and relay drivers. This performance is

accomplished through a special gate oxide design which

provides full rated conductance at gate bias in the 3V to 5V

range, thereby facilitating true on-off power control directly

from logic level (5V) integrated circuits.

Symbol

Packaging

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFD16N02L

TO-251AA

16N02L

RFD16N02LSM

TO-252AA

16N02L

NOTE: When ordering, use the entire part number. Add the suffix

9A, to obtain the TO-252AA variant in tape and reel, e.g.

RFD16N02LSM9A.

D

S

G

JEDEC TO-251AA

JEDEC TO-252AA

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

File Number

4341

RFD16N02L,

RFD16N02LSM

16A, 20V, 0.022 Ohm, N-Channel,

Logic Level, Power MOSFET

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207