RFD14N06LSM datasheet(2/8 Pages) INTERSIL

2 / 8 page

6-2

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

RFD14N06L, RFD14N06LSM,

RFP14N06LS

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

±10

Drain Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Refer to Peak Current Curve

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Refer to UIS Curve

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.32

W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V, Figure 13

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA, Figure 12

Zero Gate Voltage Drain Current

IDSS

VDS = 48V,

VGS = 0V

TC = 25

oC-

µA

TC = 150

oC-

µA

Gate to Source Leakage Current

IGSS

VGS = ±10V

100

On Resistance

rDS(ON)

ID = 14A, VGS = 5V

0.100

Ω

Turn-On Time

tON

VDD = 30V, ID = 7A,

RL = 4.28Ω, VGS = 5V,

RGS = 0.6Ω

Figures 10, 18, 19

Turn-On Delay Time

td(ON)

-13-

Rise Time

-24-

Turn-Off Delay Time

td(OFF)

-42-

Fall Time

-16-

Turn-Off Time

tOFF

100

Total Gate Charge

Qg(TOT)

VGS = 0V to 10V

VDD = 48V,

ID = 14A,

RL = 3.43Ω

Figures 20, 21

Gate Charge at 5V

Qg(5)

VGS = 0V to 5V

Threshold Gate Charge

Qg(TH)

VGS = 0V to 1V

1.5

Input Capacitance

CISS

VDS = 25V, VGS = 0V,

f = 1MHz

Figure 14

670

Output Capacitance

COSS

185

Reverse Transfer Capacitance

CRSS

-50-

Thermal Resistance Junction-to-Case

RθJC

3.125

oC/W

Thermal Resistance Junction-to-Ambient

RθJA

TO-251 and TO-252

100

oC/W

TO-220

oC/W

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Source to Drain Diode Voltage

VSD

ISD = 14A

1.5

Reverse Recovery Time

trr

ISD = 14A, dISD/dt = 100A/µs

125

RFD14N06L, RFD14N06LSM, RFP14N06LS

RFD14N06LSM датащи(PDF) 2 Page - Intersil Corporation

RFD14N06LSM датащи(HTML) 2 Page - Intersil Corporation

Html Pages

1 2 3 4 5 6 7 8

датащи скачать

ссылки URL