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BC846W датащи(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

номер детали BC846W
подробное описание детали  NPN Plastic Encapsulate Transistor
PDF  4 Pages
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производитель  SECOS [SeCoS Halbleitertechnologie GmbH]
домашняя страница  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

BC846W датащи(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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BC846AW,BW
BC847AW, BW, CW
BC848AW, BW, CW
NPN Plastic Encapsulate Transistor
Elektronische Bauelemente
24-Mar-2010 Rev. A
Page 2 of 4
ELECTRICAL CHARACTERISTICS ( Tamb = 25°C unless otherwise specified )
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
TEST CONDITIONS
Collector to Base Breakdown Voltage
BC846W
VCBO
80
-
-
V
IC = 10 uA, IE = 0
BC847W
50
BC848W
30
Collector to Emitter Breakdown Voltage
BC846W
VCEO
65
-
-
V
IC = 10 mA, IB = 0
BC847W
45
BC848W
30
Emitter to Base Breakdown Voltage
BC846W
VEBO
6
-
-
V
IE = 1 μA, IC = 0
BC847W
6
BC848W
5
Collector Cutoff Current
ICBO
-
-
15
nA
VCB = 30 V
Collector to Emitter Saturation Voltage
VCE(sat)
-
-
0.25
V
IC = 10mA, IB = 0.5 mA
-
-
0.6
IC = 100mA, IB = 5 mA
Base to Emitter Saturation Voltage
VBE(sat)
-
0.7
-
V
IC = 10mA, IB = 0.5 mA
-
0.9
-
IC = 100mA, IB = 5 mA
Base to Emitter Voltage
VBE(on)
580
660
700
mV
VCE = 5 V, IC = 2 mA
-
-
770
VCE = 5 V, IC = 10 mA
DC Current Gain
BC846AW,BC847AW,BC848AW
hFE(1)
-
90
-
VCE = 5 V, IC = 10 μA
BC846BW,BC847BW,BC848BW
150
BC847CW,BC848CW
270
BC846AW,BC847AW,BC848AW
hFE(2)
110
-
220
VCE = 5 V, IC = 2 mA
BC846BW,BC847BW,BC848BW
200
450
BC847CW,BC848CW
420
800
Transition Frequency
fT
100
-
-
MHz
VCE = 5 V, IC = 10 mA, f = 100MHz
Collector Output Capacitance
COb
-
-
4.5
pF
VCB = 10 V, f=1MHz
Noise Figure
BC846AW,BC847AW,BC848AW
NF
-
-
-
dB
VCE= 5 V, IC= 0.2 mA,
f= 1KHz, RS= 2 KΩ,
BW= 200Hz
BC846BW,BC847BW,BC848BW
10
BC847CW,BC848CW
4



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