4-329

File Number

2088.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRFP340

11A, 400V, 0.550 Ohm, N-Channel

Power MOSFET

This advanced power MOSFET is designed, tested, and

guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. These are

N-Channel enhancement mode silicon gate power field

effect transistors designed for applications such as switching

regulators, switching converters, motor drivers, relay drivers,

and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. They can be

operated directly from integrated circuits.

Formerly developmental type TA17424.

Features

• 11A, 400V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFP340

TO-247

IRFP340

NOTE: When ordering, include the entire part number.

G

D

S

SOURCE

DRAIN

DRAIN

(FLANGE)

GATE

Data Sheet

July 1999