IRFP240 datasheet(2/7 Pages) INTERSIL

2 / 7 page

4-318

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFP240

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

200

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

200

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

150

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.2

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

510

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 125oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250µA (Figure 10)

200

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

4.0

Zero-Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = 11V (Figure 7)

Gate to Source Leakage

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

VGS = 10V, ID = 10A (Figures 8, 9)

0.14

0.18

Ω

Forward Transconductance (Note 2)

gfs

VDS ≥ 10V, ID = 11A

6.7

Turn-On Delay Time

td(ON)

VDD = 100V, ID ≈ 18A, RGS = 9.1Ω, VGS = 10V,

RL = 5.4Ω

MOSFET Switching Times are Essentially

Independent of Operating Temperature

-14

Rise Time

-51

Turn-Off Delay Time

td(OFF)

-45

Fall Time

-36

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID = 18A, VDS = 0.8 x Rated BVDSS,

IG(REF) = 1.5mA (Figure 14)

Gate Charge is Essentially Independent of

Operating Temperature

-43

60nC

Gate to Source Charge

Qgs

-10

Gate to Drain “Miller” Charge

Qgd

-32

Input Capacitance

CISS

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

1275

Output Capacitance

COSS

500

Reverse Transfer Capacitance

CRSS

160

Internal Drain Inductance

Measured between the

Contact Screw on

Header that is Closer to

Source and Gate Pins

and Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

5.0

Internal Source Inductance

Measured from the

Source Lead, 6mm

(0.25in) from Header to

Source Bonding Pad

12.5

Junction to Case

RθJC

0.83

oC/W

Junction to Ambient

RθJA

Free Air Operation

oC/W

IRFP240

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