IRFF430 datasheet(2/7 Pages) INTERSIL

2 / 7 page

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRFF430

UNITS

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

500

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

500

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

2.75

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.2

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS

300

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,TSTG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to T

J = 125

oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250µA (Figure 10)

500

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

4.0

Zero-Gate Voltage Drain Current

IDSS

VDS = Rated BVDSS, VGS = 0V

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125

250

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) xrDS(ON)MAX,VGS = 10V (Figure 7)

2.75

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

VGS = 10V, ID = 1.5A (Figures 8, 9)

1.3

1.500

Ω

Forward Transconductance (Note 2)

gfs

VDS ≥ 10V, ID = 2.7A (Figure 12)

2.5

3.0

Turn-On Delay Time

td(ON)

ID ≈ 2.75A, RG = 9.1Ω, VDD = 225V, RL = 80Ω,

VGS = 10V (Figures 17, 18), MOSFET Switching Times

are Essentially Independent of Operating Temperature

Rise Time

Turn-Off Delay Time

td(OFF)

Fall Time

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID ≈ 2.75A, VDS = 0.8 x Rated BVDSS,

IG(REF) = 1.5mA (Figures 14, 19, 20), Gate Charge is

Essentially Independent of Operating Temperature

-22

Gate to Source Charge

Qgs

-11

Gate to Drain “Miller” Charge

Qgd

-11

Input Capacitance

CISS

VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)

600

Output Capacitance

COSS

100

Reverse-Transfer Capacitance

CRSS

-30

Internal Drain Inductance

Measured from the Drain

Lead, 5mm (0.2in) from

Header to Center of Die

Modified MOSFET

Symbol Showing the

Internal Device

Inductances

5.0

Internal Source Inductance

Measured from the Source

Lead, 5mm (0.2in) from

Header and Source

Bonding Pad

-15

Thermal Resistance Junction to Case

RθJC

5.0

oC/W

Thermal Resistance Junction to Ambient

RθJA

Free Air 0peration

175

oC/W

IRFF430

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