4-47

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction

Diode

-

-

-1.0

A

Pulse Source to Drain Current

(Note 3)

-

-

-8.0

A

Source to Drain Diode Voltage (Note 2)

-

-

-1.5

V

Reverse Recovery Time

-

150

-

ns

Reverse Recovery Charge

-

0.9

-

µC

NOTES:

2. Pulse test: pulse width

≤ 80µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

G

D

S

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. OUTPUT CHARACTERISTICS

0

0

25

50

75

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

0

50

100

150

25

75

125

-1.0

-0.8

-0.6

-0.4

-0.2

1

10

100

0.1

10

1

0.01

10

µs

100

µs

1ms

10ms

100ms

DC

SINGLE PULSE

OPERATION IN THIS AREA

0

-10

-20

-30

-40

-1

-2

-3

-4

-5

-50

PULSE DURATION = 80

µs

0

DUTY CYCLE = 0.5% MAX.

IRFD9120