4-281

File Number

2316.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

IRFD210

0.6A, 200V, 1.500 Ohm, N-Channel Power

MOSFET

This advanced power MOSFET is designed, tested, and

guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. These are

N-Channel enhancement mode silicon gate power field

effect transistors designed for applications such as switching

regulators, switching converters, motor drivers, relay drivers,

and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. They can be

operated directly from integrated circuits.

Formerly developmental type TA17442.

Features

• 0.6A, 200V

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

HEXDIP

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRFD210

HEXDIP

IRFD210

NOTE: When ordering, use the entire part number.

G

D

S

SOURCE

GATE

DRAIN

Data Sheet

July 1999