4-271

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Diode

-

-

1.0

A

Pulse Source to Drain Current (Note 4)

-

-

8.0

A

Source to Drain Diode Voltage (Note 2)

-

-

2.5

V

Reverse Recovery Time

-

100

-

ns

Reverse Recovery Charge

-

0.2

-

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

4. Repetitive rating: pulse width limited by maximum junction temperature.

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

FIGURE 4. OUTPUT CHARACTERISTICS

G

D

S

0

0

25

50

75

100

150

0.2

0.4

0.6

0.8

1.0

1.2

125

50

75

100

25

150

1.0

0.8

0.6

0

0.4

0.2

125

1

100

0.1

10

1

0.01

1ms

10ms

100ms

100

µs

AREA MAY BE

OPERATION IN THIS

DC

10

0

10203040

1

2

3

4

5

50

0

PULSE DURATION = 80

µs

DUTY CYCLE = 0.5% MAX

IRFD110