IRLML6401 datasheet(2/6 Pages) KEXIN

номер детали	IRLML6401

подробное описание детали	P-Channel Enhancement MOSFET

PDF	6 Pages

Scroll/Zoom	100%

производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

домашняя страница	http://www.kexin.com.cn/index.asp

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2 / 6 page

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=-250μA, VGS=0V

-12

VDS=-12V, VGS=0V

-1

VDS=-9.6V, VGS=0V, TJ= 55℃

-25

Gate-Body leakage current

IGSS

VDS=0V, VGS=±8V

100 nA

Gate Threshold Voltage

VGS(th)

VDS=VGS ID=-250μA

-0.4 -0.55 -0.95

VGS=-4.5V, ID=-4.3A

VGS=-2.5V, ID=-2.5A

VGS=-1.8V, ID=-2A

125

Forward Transconductance

gFS

VDS=-10V, ID=-4.3A

8.6

Input Capacitance

Ciss

830

Output Capacitance

Coss

180

Reverse Transfer Capacitance

Crss

125

Total Gate Charge

Gate Source Charge

Qgs

1.4

2.1

Gate Drain Charge

Qgd

2.6

3.9

Turn-On DelayTime

td(on)

Turn-On Rise Time

Turn-Off DelayTime

td(off)

250

Turn-Off Fall Time

210

Body Diode Reverse Recovery Time

trr

IF=-1.3A, dI/dt=-100A/μs

Body Diode Reverse Recovery Charge

Qrr

IF=-1.3A, dI/dt=-100A/μs

Maximum Body-Diode Continuous Current

1.3

Diode Forward Voltage

VSD

IS=-1.3A,VGS=0V

-1.2

VGS=0V, VDS=-10V, f=1MHz

VGS=-5.0V, VDS=-10V, ID=-4.3A

Zero Gate Voltage Drain Current

IDSS

mΩ

ID=-1.0A, VDS=-6.0V, RL=6Ω,RGEN=89Ω

RDS(On)

Static Drain-Source On-Resistance

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Marking

1F *

IRLML6401 (KRLML6401)

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