3

Internal Drain Inductance

Measured From the

Drain Lead, 6mm

(0.25in) From Package

to Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

-

4.5

-

nH

Internal Source Inductance

Measured From the

Source Lead, 6mm

(0.25in) from Header to

Source Bonding Pad

-

7.5

-

nH

Thermal Resistance Junction to Case

-

-

6.4

Thermal Resistance Junction to Ambient

Free Air Operation

-

-

62.5

Source to Drain Diode Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Continuous Source to Drain Current

Modified MOSFET Sym-

bol Showing the Integral

Reverse P-N Junction

Rectifier

-

-

2.0

A

Pulse Source to Drain Current

(Note 3)

-

-

8.0

A

Source to Drain Diode Voltage (Note 2)

-

-

2.0

V

Reverse Recovery Time

67

-

340

ns

Reverse Recovery Charge

0.24

0.54

1.2

µC

NOTES:

2. Pulse test: pulse width

≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

Electrical Specifications

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

G

D

S

G

D

S

0

50

100

150

0

0.2

0.4

0.6

0.8

1.0

1.2

0

25

50

75

100

125

0.4

0.8

1.2

1.6

2.0

150

IRF614