IRF520 datasheet(2/7 Pages) INTERSIL

2 / 7 page

4-173

Absolute Maximum Ratings

TC = 25

oC, Unless Otherwise Speciﬁed

IRF520

UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS

100

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

100

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID

TC = 100

oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

9.2

6.5

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

±20

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD

Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

0.4

W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

-55 to 175

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25

oC to 150oC.

Electrical Speciﬁcations

TC = 25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

BVDSS

ID = 250µA, VGS = 0V (Figure 10)

100

Gate to Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250µA

2.0

4.0

Zero Gate Voltage Drain Current

IDSS

VDS = 95V, VGS = 0V

250

µA

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150

1000

µA

On-State Drain Current (Note 2)

ID(ON)

VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)

9.2

Gate to Source Leakage Current

IGSS

VGS = ±20V

±100

Drain to Source On Resistance (Note 2)

rDS(ON)

ID = 5.6A, VGS = 10V (Figure 8, 9)

0.25

0.27

Ω

Forward Transconductance (Note 2)

gfs

VDS ≥ 50V, ID = 5.6A (Figure 12)

2.7

4.1

Turn-On Delay Time

td(ON)

VDD = 50V, ID ≈ 9.2A, RG = 18Ω, RL = 5.5Ω

MOSFET Switching Times are Essentially

Independent of Operating

Temperature

Rise Time

-30

63ns

Turn-Off Delay Time

td(OFF)

-18

70ns

Fall Time

-20

59ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Qg(TOT)

VGS = 10V, ID = 9.2A, VDS = 0.8 x Rated BVDSS,

Ig(REF) = 1.5mA (Figure 14) Gate Charge is

Essentially Independent of Operating

Temperature

-10

Gate to Source Charge

Qgs

2.5

Gate to Drain “Miller” Charge

Qgd

2.5

Input Capacitance

CISS

VDS = 25V, VGS = 0V, f = 1MHz

(Figure 11)

350

Output Capacitance

COSS

130

Reverse Transfer Capacitance

CRSS

-25

Internal Drain Inductance

Measured From the Contact

Screw On Tab To Center of

Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

3.5

Measured From the Drain

Lead, 6mm (0.25in) From

Package to Center of Die

4.5

Internal Source Inductance

Measured From the Source

Lead, 6mm (0.25in) From

Header to Source Bonding

Pad

7.5

Thermal Resistance Junction to Case

RθJC

2.5

oC/W

Thermal Resistance Junction to Ambient

RθJA

Free Air Operation

oC/W

IRF520

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