HAT1069C_15 datasheet(4/6 Pages) RENESAS

номер детали	HAT1069C

подробное описание детали	Silicon P Channel Power MOS FET Power Switching

PDF	6 Pages

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производитель	RENESAS [Renesas Technology Corp]

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4 / 6 page

HAT1069C

R07DS1169EJ0400 Rev.4.00

Page 4 of 5

Mar 19, 2014

Case Temperature Tc (

°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

–25

075

100 125

150

100

120

VGS = –4.5 V

–3

–0.1

–1

–10

–0.3

100

0.1

Tc = –25

°C

VDS = –10 V

°C

Pulse Test

ID = –4 A, –1.5 A, –1 A

–1 A

–1.5 A

–4 A

–2.5 V

–1.8 V

Drain Current ID (A)

Switching Characteristics

1000

100

–1

–100

–10

–0.1

td(off)

td(on)

VGS = –4.5 V, VDD = –10 V

Source to Drain Voltage VSD (V)

–12

–16

–8

–4

–0.4

–0.8

–1.2

–1.6

–2.0

Reverse Drain Current vs.

Source to Drain Voltage

Ta = 25

°C

–5 V

VGS = 0, 5 V

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

0–4

–2

–8

–10

–6

–12

10000

1000

100

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

–16

–8

–4

ID = –3 A

Gate Charge Qg (nc)

Dynamic Input Characteristics

VDD = –10, –12 V

–7 V

–5 V

Pulse Test

VDD = –12 V

–10 V

–5 V

–7 V

–1 A

–4 A

–1.5 A

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