IRF430 datasheet(4/7 Pages) INTERSIL

номер детали	IRF430

подробное описание детали	4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET

PDF	7 Pages

Scroll/Zoom	100%

производитель	INTERSIL [Intersil Corporation]

домашняя страница	http://www.intersil.com/cda/home

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FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS

FIGURE 7. TRANSFER CHARACTERISTICS

NOTE: Heating effect of 2

µs pulse is minimal.

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE

ON RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Speciﬁed (Continued)

100

1000

100

0.1

VDS, DRAIN TO SOURCE VOLTAGE (V)

TC = 25

TJ = MAX RATED

SINGLE PULSE

µs

100

µs

1ms

10ms

100ms

OPERATION IN THIS

AREA IS LIMITED

BY rDS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

100

300

200

VGS = 4.5V

µs PULSE TEST

VGS = 4V

VGS = 5V

VGS = 5.5V

VGS = 10V

010

VDS, DRAIN TO SOURCE VOLTAGE (V)

µs PULSE TEST

VGS = 4.5V

VGS = 5V

VGS = 5.5V

VGS = 10V

VGS = 4V

1234

VGS, GATE TO SOURCE VOLTAGE (V)

VDS > ID(ON) x rDS(ON) MAX

µs PULSE TEST

DUTY CYCLE

≤ 2%

125oC

25oC

-55oC

ID, DRAIN CURRENT (A)

025

VGS = 20V

VGS = 10V

515

2.2

1.4

0.6

060

-60

TJ, JUNCTION TEMPERATURE (

oC)

ID = 1.5A

1.8

1.0

0.2

-40

-20

100

140

120

VGS = 10V

IRF430

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