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IRF7413 датащи(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

номер детали IRF7413
подробное описание детали  N-Channel MOSFET
PDF  6 Pages
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производитель  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
домашняя страница  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

IRF7413 датащи(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

  IRF7413 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd IRF7413 Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd IRF7413 Datasheet HTML 3Page - Guangdong Kexin Industrial Co.,Ltd IRF7413 Datasheet HTML 4Page - Guangdong Kexin Industrial Co.,Ltd IRF7413 Datasheet HTML 5Page - Guangdong Kexin Industrial Co.,Ltd IRF7413 Datasheet HTML 6Page - Guangdong Kexin Industrial Co.,Ltd  
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MOSFET
N-Channel MOSFET
IRF7413 (KRF7413)
■
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
30
V
VDS=24V, VGS=0V
1
VDS=24V, VGS=0V, TJ=125℃
25
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
±
100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250μA
1
3
V
VGS=10V, ID=7.2A
*1
11
VGS=4.5V, ID=6A
18
Forward Transconductance
gFS
VDS=10V, ID=7.2A
16
S
Input Capacitance
Ciss
1670
Output Capacitance
Coss
670
Reverse Transfer Capacitance
Crss
100
VGS=0V, VDS=1V, f=1MHz
2290
VGS=0V, VDS=24V, f=1MHz
680
Effective Output Capacitance
Coss eff VGS=0V, VDS=0 to 24V
1020
Total Gate Charge
Qg
44
66
Gate Source Charge
Qgs
7.9
Gate Drain Charge
Qgd
9.2
Turn-On DelayTime
td(on)
8.8
Turn-On Rise Time
tr
8
Turn-Off DelayTime
td(off)
35
Turn-Off Fall Time
tf
14
Body Diode Reverse Recovery Time
trr
50
75
Body Diode Reverse Recovery Charge
Qrr
74
110
nC
Maximum Body-Diode Continuous Current
IS
*2
3.1
Pulsed Source Current
ISM
96
Diode Forward Voltage
VSD
IS=7.2A,VGS=0V,TJ = 25℃ *1
1
V
IF= 7.2A, dI/dt= 100A/μs, TJ = 25℃ *1
A
ns
Zero Gate Voltage Drain Current
IDSS
μ
A
mΩ
VGS=10V, VDS=10 V, ID=7.2A,
RG=6.2Ω
*1
RDS(On)
Static Drain-Source On-Resistance
Output Capacitance
Coss
VGS=0V, VDS=25V, f=1MHz
VGS=10V, VDS=24V, ID=7.2A
nC
pF
*1: Pulse width ≤ 300μs; duty cycle ≤ 2%.
*2: MOSFET symbol showing the integral reverse p-n junction diode.



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