FDV303N-3 datasheet(2/4 Pages) KEXIN

номер детали	FDV303N-3

подробное описание детали	N-Channel MOSFET

PDF	4 Pages

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производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

домашняя страница	http://www.kexin.com.cn/index.asp

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2 / 4 page

SMD Type

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MOSFET

N-Channel MOSFET

FDV303N (KDV303N)

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Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

ID=250μA, VGS=0V

VDS=20V, VGS=0V

VDS=20V, VGS=0V, TJ=55℃

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±8 V

100

Gate Threshold Voltage

VGS(th)

VDS=VGS , ID=250μA

0.65

1.5

VGS=4.5V, ID=0.5A

450

VGS=4.5V, ID=0.5A TJ=125℃

800

VGS=2.7V, ID=0.2A

600

On State Drain Current

ID(ON)

VGS=2.7V, VDS=5V (Note.1)

0.5

Forward Transconductance

gFS

VDS=5V, ID=0.5A (Note.1)

1.45

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Charge

1.64

2.3

Gate Source Charge

Qgs

0.38

Gate Drain Charge

Qgd

0.45

Turn-On DelayTime

td(on)

Turn-On Rise Time

8.5

Turn-Off DelayTime

td(off)

Turn-Off Fall Time

Maximum Body-Diode Continuous Current

0.3

Diode Forward Voltage

VSD

IS=0.5A,VGS=0V

1.2

VGS=0V, VDS=10V, f=1MHz

VGS=4.5V, VDS=5V, ID=0.5A

Zero Gate Voltage Drain Current

IDSS

mΩ

VGS=4.5V, VDS=6V,ID=0.5A,RG=50Ω

RDS(On)

Static Drain-Source On-Resistance

Note.1: Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%.

(Note.1)

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Marking

303

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