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HIP6013CB датащи(PDF) 9 Page - Intersil Corporation |
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HIP6013CB датащи(HTML) 9 Page - Intersil Corporation |
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9 / 11 page ![]() 2-170 operation, select the bulk capacitor with voltage and current ratings above the maximum input voltage and largest RMS current required by the circuit. The capacitor voltage rating should be at least 1.25 times greater than the maximum input voltage and a voltage rating of 1.5 times is a conservative guideline. The RMS current rating requirement for the input capacitor of a buck regulator is approximately 1/2 the DC load current. For a through hole design, several electrolytic capacitors (Panasonic HFQ series or Nichicon PL series or Sanyo MV- GX or equivalent) may be needed. For surface mount designs, solid tantalum capacitors can be used, but caution must be exercised with regard to the capacitor surge current rating. These capacitors must be capable of handling the surge-current at power-up. The TPS series available from AVX, and the 593D series from Sprague are both surge current tested. MOSFET Selection/Considerations The HIP6013 requires an N-Channel power MOSFET. It should be selected based upon rDS(ON), gate supply requirements, and thermal management requirements. In high-current applications, the MOSFET power dissipation, package selection and heatsink are the dominant design factors. The power dissipation includes two loss components; conduction loss and switching loss. The conduction losses are the largest component of power dissipation for the MOSFET. Switching losses also contribute to the overall MOSFET power loss (see the equations below). These equations assume linear voltage- current transitions and are approximations. The gate- charge losses are dissipated by the HIP6013 and don't heat the MOSFET. However, large gate-charge increases the switching interval, tSW, which increases the upper MOSFET switching losses. Ensure that the MOSFET is within its maximum junction temperature at high ambient temperature by calculating the temperature rise according to package thermal-resistance specifications. A separate heatsink may be necessary depending upon MOSFET power, package type, ambient temperature and air flow. Standard-gate MOSFETs are normally recommended for use with the HIP6013. However, logic-level gate MOSFETs can be used under special circumstances. The input voltage, upper gate drive level, and the MOSFET’s absolute gate-to- source voltage rating determine whether logic-level MOSFETs are appropriate. Figure 9 shows the upper gate drive (BOOT pin) supplied by a bootstrap circuit from VCC. The boot capacitor, CBOOT develops a floating supply voltage referenced to the PHASE pin. This supply is refreshed each cycle to a voltage of VCC less the boot diode drop (VD) when the lower MOSFET, Q2 turns on. A logic-level MOSFET can only be used for Q1 if the MOSFET’s absolute gate-to-source voltage rating exceeds the maximum voltage applied to VCC. Figure 10 shows the upper gate drive supplied by a direct connection to VCC. This option should only be used in converter systems where the main input voltage is +5VDC or less. The peak upper gate-to-source voltage is approximately VCC less the input supply. For +5V main power and +12VDC for the bias, the gate-to-source voltage of Q1 is 7V. A logic-level MOSFET is a good choice for Q1 and a logic-level MOSFET is a good choice for Q1 under these conditions. PCOND = IO 2 x r DS(ON) x D PSW = 1 2 IO x VIN x tSW x Fs Where: D is the duty cycle = VO / VIN, tSW is the switching interval, and Fs is the switching frequency. FIGURE 9. UPPER GATE DRIVE - BOOTSTRAP OPTION +12V HIP6013 GND UGATE PHASE BOOT VCC +5V OR +12V CBOOT DBOOT Q1 D2 NOTE: VG-S ≈ VCC - VD + - HIP6013 |
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